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1.3. Three-Dimensional or Vertical Integ... > 1.3.1. Opportunities for Three-Dimen... - Pg. 9

1.3 Three-Dimensional or Vertical Integration 9 Laser recrystallized CVD polysilicon Al contacts Gate oxide for top level device n + n + Joint gate n FIGURE 1-7 Cross section of a JMOS inverter [35]. p + n-type p + Gate oxide for bottom level device share the same gate, considerably reducing the total area of the inverter, as illustrated in Figure 1-7. The term joint metal oxide semi- conductor (JMOS) was used for these structures to describe the joint use of a single gate for both devices [35]. In the following years,