Calculate contact potential of a Ge diode having donor impurity concentration N_D = 10²²/m³, acceptor impurity concentration N_A = 10²⁴/m³, and intrinsic concentration 2.5 × 10¹⁹/m³.

Solution:

What is the value of depletion capacitance across an abrupt p⁺ −n junction of Si with and without reverse bias of 4V having ψ_D = 0.8V, N_D = 4 × 10²¹/m³, ε_s = 12, junction area = 4 × 10⁻⁷ m²?

Solution:

Calculate the saturation current density in an abrupt junction having data like: N_D =

Solution:

Calculate the depletion width and maximum field at zero bias for and maximum field at zero bias for a p⁺ −n abrupt junction with N_A = 10²⁵/m³, N_D = 10²²/m³, n_i = 1.5 × 10¹⁶/m³, and built-in potential = 0.576.

Solution:

Obtain electrostatic potential and depletion width in each material having an ideal abrupt anisotype heterojunction with builtin potential of 15 V, impurity concentration in p-type = 3 × 10²⁵ acceptors/m³ and in n-type 1.5 × 10²² donors/m³. The dielectric constant of Si is 12.

Solution:

Calculate depletion width and maximum field in case of graded junction of Si with impurity concentration gradient = 10²⁸, contact potential = 0.645V, n_i = 1.5 × 10¹⁶/m³.

Solution: